一种用于5V电源ESD防护的新型高维持电压MLSCR

A Novel Latch-Up Free MLSCR with High Holding Voltage for 5V Power ESD Protection

针对5 V电源的静电放电(ESD)防护,提出一种利用PMOS管分流的新型优化横向可控硅(PMOS-MLSCR)。相比于传统MLSCR,PMOS-MLSCR具有更高的维持电压和相对较低的触发电压,有效避免了传统MLSCR面临的闩锁风险。基于0.18μm BCD工艺,采用TCAD仿真模拟PMOS-MLSCR和传统MLSCR,并通过模拟TLP测试器件特性。仿真结果表明,PMOS-MLSCR的维持电压相对于传统MLSCR提升了3.64 V,触发电压降低了1.49 V,并且满足5 V电源ESD防护的设计窗口。

A new structure of the modified lateral silicon controlled rectifier(PMOS-MLSCR)-based ESD protection circuit using a PMOS branch was proposed for the ESD protection in 5 V applications.The proposed structure that was branched by a PMOS path exhibited a higher holding voltage(Vh)and a lower trigger voltage(Vt1)than traditional MLSCRs,which efficiently avoided the latch-up effects.The characteristics of the conventional MLSCR and the proposed device were measured via the TCAD simulations of the TLP based on a 0.18μm BCD process.The simulation results showed that,the proposed PMOS-MLSCR owned a 3.64 V higher Vh and a 1.49 V lower Vt1 than that of the traditional MLSCR,and also satisfied the design window of 5 V power ESD protection.