Hf0.5Zr0.5O2基铁电电容器的特性研究

Study on Characteristics of Hf0.5Zr0.5O2-Based Ferroelectric Capacitors

利用原子层淀积工艺制备了9 nm厚的铪锆氧(Hf0.5Zr0.5O2)铁电薄膜。通过淀积TiN顶/底电极形成Hf0.5Zr0.5O2铁电电容,研究退火工艺和机械夹持工艺对铁电电容性能的影响。实验结果表明,极化强度-电压曲线为电滞回线形,双倍剩余极化强度达31.7μC/cm2,矫顽电压约为1.6 V,电学性能明显提高。在150℃高温下,Hf0.5Zr0.5O2基铁电电容器的电学性能仍然良好,证明了退火工艺和机械夹持工艺对电学性能的优化作用。

A 9 nm thick ferroelectric thin film of hafnium zirconium oxide(Hf0.5Zr0.5O2)was prepared by atomic layer deposition.The Hf0.5Zr0.5O2 ferroelectric capacitor also incorporated the TiN top/bottom electrodes.The effects of annealing process and mechanical clamping process on the characteristics of ferroelectric capacitors were investigated.Experimental results showed that the polarization strength-voltage curve was hysteresis loop.The double remnant polarization was 31.7μC/cm2 with a coercive voltage of about 1.6 V,and the electrical performance was obviously improved.The ferroelectric capacitors worked very well even at the high temperature of 150℃.It was proved that annealing process and mechanical clamping process could optimize the electrical properties of Hf0.5Zr0.5O2 ferroelectric capacitors.