一种300 GHz CMOS高增益谐波混频器

A 300 GHz CMOS High Gain Harmonic Mixer

基于TSMC 65 nm CMOS工艺,设计了一种工作在300 GHz的高增益、3阶谐波混频器。在谐波混频器中,提出将射频电感与接收天线设计为一体的新思路,不仅避免了二者之间的匹配,还减小了芯片尺寸。该谐波混频器包括片上天线、混频模块、IF放大器等。仿真结果表明,片上环形天线的谐振频率点在300 GHz附近,射频电感在300 GHz附近为21.9 pH,混频模块的转换增益为-5.4 dB,IF放大器的电压增益为23.5 dB,谐波混频器的最大转换增益为14.9 dB。当谐波混频器的转换增益大于0 dB时,输出频率带宽为0.05~12.47 GHz。

Based on TSMC 65 nm CMOS technology,a high gain,third-order harmonic mixer working at 300 GHz was designed.In the circuit of harmonic mixer,a new idea of integrating RF inductors and receiving antennas was proposed,which not only saved their matching network,but also reduced the size of the chip.The harmonic mixer included on-chip antenna,mixing module and IF amplifier.The simulation results showed that the resonant frequency of the on-chip annular antenna was around 300 GHz,the value of the RF inductance at 300 GHz was 21.9 pH,the conversion gain of the mixing module was-5.4 dB,the IF amplification voltage gain was 23.5 dB and the maximum conversion gain of the harmonic mixer was 14.9 dB.When the conversion gain of the harmonic mixer was greater than 0 dB,the output frequency bandwidth could reach to 0.05~12.47 GHz.