硅各向异性腐蚀模型及其模拟进展

Progress on the Modelling and Simulation of Silicon Anisotropic Etching

分析了硅各向异性腐蚀模型及其模拟的研究现状。介绍了两类主要的腐蚀模型—几何模型和原子模型各自的特点、利弊及发展变化的趋势 ,最后又列举了几种成熟的、应用不同模型的模拟软件。

In this article, the progress on the modelling and simulation of silicon anisotropic etching is presented. For two main etching models, i.e., geometrical model and atomic model, their characters including their advantages, shortcomings and the developing tendencies are all discussed seperately. Finally, some simulation softwares using above models are briefly introduced.