摘要
A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately 15μm thickness for the stiff backplate.The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB(5.6mV/Pa) to -55dB(1.78mV/Pa) under the frequency from 500Hz to 10kHz,and shows a gradual increase at higher frequency.The cut-off frequency is above 20kHz.
提出了一种新的工艺方法制备硅基电容式微传声器 .用氧化多孔硅作牺牲层制备空气隙 ,用约 15μm厚的浓硼掺杂硅作为微传声器的刚性背极板 .采用该方法制备的微传声器 ,在 50 0 Hz至 11k Hz的工作频率下 ,灵敏度范围为 -55d B(1.78m V/Pa)到 -4 5d B(5.6m V/Pa) ,随着频率的升高 ,灵敏度呈上升趋势 ,截止频率超过 2 0 k
