用局域寿命控制技术改善功率快恢复二极管性能的仿真研究

Simulation of Power Fast Recovery Diodes Using Local Lifetime Controlling Technique

针对局域低寿命区的参数对快恢复硅功率二极管性能的影响进行了系统的仿真研究 ,得到了全面系统的研究结果 ,其中包括局域低寿命区在二极管中的位置不同和局域低寿命区中复合中心能级在禁带中的位置不同对快恢复二极管的反向恢复时间 ( trr)、反向恢复软度因子 ( S)、正向压降 ( VF)、漏电流 ( IR)等各个单项性能的影响 ,以及对 trr- S、trr- VF 和 trr- IR 等各项性能综合折衷的影响 .这些结果对高速功率器件寿命工程研究和器件制造工程都有重要的参考价值 .

The influence of parameters of the local low-lifetime region on the performance of fast recovery silicon power diodes is simulated.Comprehensive and systematic results are obtained,including the influence of different locations of the low-lifetime region in the diode and the different locations of the recombination center level in the energy gap on the following separate factors:reverse recovery time (t rr),reverse recovery softness factor (S),forward voltage drop (V F),and high temperature leakage current (I R).Furthermore,the influence of the parameters of the local low-lifetime region on the tradeoff between t rr and S,t rr and V F,trr and I R is also studied.These results have an important reference value on the research of the lifetime engineering for high-speed power device and device manufacture engineering.