内嵌设备模型的离子注入工艺模拟程序

A Simulation Program with Equipment Model in Ion Implantation Process

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摘要以离子注入工艺为例 ,通过研究沟道效应对离子注入工艺的影响 ,提出了建立设备模型的必要性 ,并且编程加以实现 . Taking the process of ion implantation as an example,the necessity of establishing an equipment model in process simulation is put forward.A program is made to realize the intention.

作者李煜李瑞伟王纪民

机构地区清华大学微电子学研究所

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第5期556-560,共5页 半导体学报（英文版）

关键词设备模型离子注入工艺模拟沟道效应编程 equipment model process simulation ion implantation channeling effects

分类号 TN305 [电子电信—物理电子学]

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参考文献6

1[1]Takeda T,Tazawa S,Yoshii A.Precise ion-implantation analysis including channeling effects.IEEE Trans Electron Devices,1986,ED-33:1278
2[2]Crandle T L,Mulvancy B J.An ion-implantation model incorporation damage calculations crystalling targets.IEEE Electron Device Lett,1990,11:42
3[3]Yang S H,Morris S J,Tian S,et al.Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon.IEEE Trans Semiconduct,Manufact,1996,9:49
4[4]Posselt M,Schmidt B,Murthy C S,et al.Modeling of damage accumulation during ion implantation into single-crystalline silicon.J Electrochem Soc,1997,144:1495
5[5]Klein K M,Park C,Tasch A F.Monte Carlo simulation of boron implantation into single-crystalline silicon.IEEE Trans Electron Devices,1992,39:1614
6[6]Eaglesham D J,Stolk P A,Gossmanm H J,et al.Implantation and transient B diffusion in Si:the source of the interstitials.Appl Phys Lett,1994,65:2305

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Journal of Semiconductors

2003年第5期

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内嵌设备模型的离子注入工艺模拟程序

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