分子束外延生长Ge_xSi_(1-x)的原位俄歇定量分析

ACCURATE IN-SITU AUGER ANALYSIS OF MBE-GROWN Ge_xSi_(1-x)

通过分子束外延生长不同组分的Ge_xSi_(1-x)标样,测量其俄歇谱(dN/dE～E),得到了在指定的实验条件下Ge(LMM)和Si(KLL)幅度之比与Ge组分x的关系,与只用纯Ge和纯Si原子灵敏度因子之比计算结果差别很小.证明俄歇电子谱是组分x原位测量的有效手段,相对误差在10%以内.讨论了Ge的偏析现象,在x>0的情况下Ge偏析不致于影响上述测量方法的准确性.

The dependence of Auger intensity (p-p) ratio of Ge (LMM) to Si (KLL) onthe composition x of Ge under specified experimental conditions has been obtained fromthe Auger spectra (dN/dE～E) of MBE-grown Ge_xSi_(1-x) standards. It is slightly differentfrom the calculated result based on the relative atomic sensitivity factors obtained frompure Ge and pure Si standards. Auger Electron Spectroscopy turns out to be an effectivemeans for in-situ Ge composition measurement, and in most cases the relative error isaround 10% or less. Ge segregation has been discussed. In case x>0.1, Ge segregation hasno appreciable effect on the accuracy of such measurement method.