通过InGaAsP外延层的InP深Zn扩散理论与实验研究

THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF DIFFUSION OF Zn INTO InP THROUGH InGaAsP

研究了Zn在InP、InGaAsP以及InGaAsP/InP中的扩散,扩散结深均与时间的平方根成正比.对于InGaAsP/InP单异质结,扩散结深还与InGaAsP覆盖层的厚度x_0有关.推导出其结深与扩散时间的函数关系为x_j/t^(1/2)=-x_0/(rt^(1/2))+I.

Diffusion of Zn into InP, InGaAsP and InGaAsP/InP single heterostructureshas been studied. The depth of the diffusion front is found to be proportional to the squareroot of the diffusion time. For single heterostructures the junction depth is dependent onthe InGaAsP epilayer thickness x_0, i.e. x_j/t^(1/2)=-x_0/(rt^(1/2))+I, which is very useful inthe fabrication of many electronic and optoelectronic devices where heterostructures areused and Zn diffusion is necessary.