摘要
对不同氧含量的硅片在300K到4.2K温度范围进行红外吸收测量表明:低温(80～4.2K)下硅的红外吸收谱中1127cm^(-1)处的吸收是硅中氧的吸收峰.
Silicon crystals of different oxygen contents have been investigated by means of
infrared absorption spectroscopy at 300K and 4.2K. It is seen from the experiments that
the absorption band at 1127cm^(-1)at low temperatures (80~4.2K) is due to oxygen absorp-
tion.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第4期327-330,共4页
Journal of Infrared and Millimeter Waves
基金
红外物理国家重点实验室部分资助课题
关键词
硅
氧
红外辐射
silicon, oxygen, infrared absorption.
