用射频磁控溅射法在二氧化硅衬底上制备磁光Ce∶YIG薄膜

Growth of Magneto-optic Ce-substituted YIG Thin Films on AmorphousSilica Substrated by RF Magnetron Sputtering

使用射频磁控溅射法在非晶态的二氧化硅衬底上制备Ce1YIG磁光薄膜。生成的Ce1YIG薄膜为非晶态形式 ,经过后续的热处理过程 ,转变为晶化薄膜 ,在用波长为 6 30nm的激光测量时 ,薄膜的饱和法拉弟旋转系数θF 为 80 0°/mm。晶化薄膜具有很强的平行于膜面的磁化强度 ,用VSM测得晶化薄膜的居里温度为 2 2 0℃。实验结果表明 :所制备的薄膜适宜于制备波导型磁光隔离器。同时 。

Ce substituted yttrium iron garnet(Ce 1YIG) films were grown on amorphous silica substrates by RF magnetron sputtering.The as grown amorphous films become crystallized after appropriate annealing.The saturation Faraday rotation coefficient, θ F,was found to be about 800°/mm for the 630 nm laser light.Strong in plane magnetization was observed and the Curie temperature of the crystal films was measured to be 220 ℃ with VSM technique in atmosphere.The results also show that Ce 1YIG can be useful material to fabricate non reciprocal wave guide devices,for instance,inteqrated optics isolators.