以铝为助剂结合放电等离子烧结制备Ti_3SiC_2

Synthesis of Ti_3SiC_2 by Spark Plasma Sintering (SPS) with the Addition of Aluminium

以铝为助剂结合放电等离子烧结工艺,在较低温度下快速制备出高纯致密Ti_3SiC_2块体材料,掺加适量铝能加快Ti_3SiC_2的反应合成,提高制备材料的纯度,并促进Ti_3SiC_2晶体的生长和材料的快速烧结致密,在升温速率为80℃/min,z轴压力为30MPa时,材料制备的最佳温度为1200～1250℃,所制备材料经XRD、SEM和EDS分析表明不含TiC和SiC等杂质相,Ti_3SiC_2为5～25μm的板状结晶。

Ti3SiC2 material with high purity and density was fabricated by the spark plasma sintering with the addition of aluminium. The proper addition of Al accelerates the synthesis reaction and the crystal growth of Ti3SiC2, and increases the purity of synthesized samples. At the heating rate of 80degreesC/min and under the pressure of 30MPa, the ideal synthesis temperature ranges from 1150degreesC to 1250degreesC. Ti3SiC2 obtained is in plane-shape with the size of 5similar to 25mum.