CCl_2F_2等离子体干法刻蚀InSb-In薄膜的研究

Research of CCl_2F_2 plasma dry etching InSb-In thin film

用朗缪尔探针诊断了反应室内的等离子体密度,研究了CCl2F2等离子体对InSb In薄膜的刻蚀,结果表明该实验装置能够产生高密度等离子体,在刻蚀样品表面等离子体密度达到6.7170×1010cm-3,CCl2F2等离子体能有效地对InSb In薄膜进行刻蚀。

The plasma density in the plasma etching experimental application are diagnosed by a Langmuir single probe and the effects on CCl2F2 plasma etching InSbIn thin film is studied.The experimental results show that the plasma etching experimental device could produce high density plasma.The number of the plasma density was 6.717?0×1010cm-3 on the surface of the sample.The CCl2F2 plasma could etch InSbIn thin film effectively.