摘要
引入渐变理论 ,通过建立AlGaInP四元系材料渐变异质结能带简单模型 ,分析在渐变长度相同、不同渐变方式下导带边的情况 .分析不同掺杂浓度下 ,渐变区长度变化对势垒尖峰值和n区电势能之间差值的影响 .讨论了渐变方式引入高亮度发光二极管 (HB LED)
A simple model of the graded heterojunction in ALGaInP compound semiconductors was introduced to analyze the energy band profile. We analyze the energy band profiles with the different grading ways but the same grading length, under the different doping densities. We analyze the effect of the different grading lengths on the surplus of the spike potential to the potential of the n region under the different doping densities. We analyze the effect of the graded heterojunction, finding it can improve the HB-LED ( high-brightness light emitting diode) performance, and proved by the experiment. A graded heterojunction should be applied to HB-LED, based on this analysis.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第5期1264-1271,共8页
Acta Physica Sinica
基金
广州市科技重点计划项目 (批准号 :1999 z 0 35 0 1)资助的课题~~
