氮化铝单晶薄膜的ECR-PEMOCVD低温生长研究

Study on low-temperature growth of AlN single crystal film by ECR-PEMOCVD

采用电子回旋共振等离子体增强金属有机物化学气相沉积 (ECR -PEMOCVD)技术 ,在c轴取向的蓝宝石即α Al2 O3( 0 0 0 1)衬底上 ,以氮化镓 (GaN)缓冲层和外延层作为初始层 ,分别以高纯氮气 (N2 )和三甲基铝 (TMAl)为氮源和铝源低温生长氮化铝 (AlN)薄膜 .并利用反射高能电子衍射 (RHEED)、原子力显微镜 (AFM)和x射线衍射 (XRD)等测量结果 ,研究了氢等离子体清洗、氮化和GaN初始层对六方AlN外延层质量的影响 ,从而获得解理性与α Al2 O3衬底一致的六方相AlN单晶薄膜 ,其XRD半高宽为

The AlN film with GaN initial-layer ( GaN buffer layer and epilayer) has been grown on alpha-Al2O3 (0001) substrate by electron cyclotron resonance-plasma-enhanced metal organic chemical vapor deposition( ECR-PEMOCVD) technique at low temperatures using TMAl and high pure N-2 as Al and N sources, respectively. The effects of hydrogen plasma cleaning, nitridation and GaN inital-layer on the quality of AlN epilayer have been investigated by RHEED( reflection high-energy electron diffraction), TEM (transmission electron microscope) and XRD (x-ray diffraction). And high-quality hexagonal-phase AlN single crystal films whose cleavability is the same as the substrate have been grown at low temperatures. The full width at half maximum of XRD peaks is 12'.