激光刻蚀与化学腐蚀结合法制备量子线(点)结构

Quantum wire (dot) prepared by combination of laser and chemical etching

目前制备量子线(点)主要采用微细加工或自组织方法,但存在沾污或分布规律不可控等局限性.介绍了一种既可避免这些缺点而且简单易行的方法:利用激光刻蚀与化学腐蚀相结合的方法,在InP单晶片上刻蚀出了台宽为1μm且分布规则的条状结构和网格结构,通过化学方法进一步腐蚀后,可使台宽减小到160nm左右.

The main methods of preparing quantum wires (dots) at present are fine processing and self\|organization. Considering its limitation of pollution or irregular in distribution, a combination way of laser and chemical etching is used, about 1 μm wide periodic stripe and grid structures are fabricated on InP substrate by laser beam etching. Etched by wet\|etching, the sizes of periodic stripe and grid structures are reduced to less than 160 nm.