摘要
本文讨论PbTiO_3铁电薄膜的溶胶-凝胶制备技术、机理及PbTiO_3薄膜的结构和电性能.研究结果表明,在MgO和SrTiO_3单晶基片上制备的PbTiO_3薄膜为钙钛矿型结构的高度取向薄膜;在Si单晶基片上制备的PbTiO_3薄膜为钙钛矿型结构的陶瓷薄膜.PbTiO_3薄膜具有良好的铁电性能和热释电性能,这些膜薄适合于制备铁电存储器和热释电红外探测器.
By using the SOL-GEL process, highly oriented PbTiO3 thin films with a perovskite type of structure on MgO and SrTiO3 single crystal substrate, (100)PbTiO3 //(100)MgO and(0 01)PbTiO3 //(1 0 0) SrTiO3, and ceramic thin films with perovskite type structure on Si single crystal substrate have been prepared. The spontaneous polarization p,, the remnant polarization pr ahd the coercive field Ec of PbTiO3 ceramic thin films are 30uc/cm2,15uc/cm2 and 50 kV/cm. respectively. PbTiO3 ceramic thin films have a high-pyro-electric coefficient r of 2.9×10-8 c/cm2.K.a high quality factor for voltage response of 0.60×10-10 c.cm/J and a quality factor for specific detectivity of 0.74×10-8 c.cm/J. These thin films are suitable for use in ferroelectric memories and pyroelectric infrared detectors.
出处
《华中理工大学学报》
CSCD
北大核心
1992年第6期117-121,共5页
Journal of Huazhong University of Science and Technology
基金
"863"高技术项目
关键词
铁电
热释电
薄膜
钛酸铅
ferroelectric
pyroelectric
lilin fi Ims
highly oriented
SOL
GEL
