ZnO非线性电阻冲击蜕变机理分析

On the Impulse Degradation Mechanism of Zinc Oxide Nonlinear Resistors

使用透射电镜、能谱、电子衍射等微观分析手段,对脉冲大电流冲击后的ZnO非线性电阻I-V特性蜕变现象进行了研究.实验结果表明,ZnO非线性电阻的冲击蜕变主要是由于离子迁移致使正、负离子在晶界层与晶粒界面两侧的积累和离散所造成的,同时也与富铋界面层的相结构改变有密切的关系.

The high-energy impulse degradation of ZnO nonlinear resistors is studied by transmission electronic microscopy in conjunction with X-ray diffractometry and energy dispersive X-ray analysis. It is shown that the impulse degradation of ZnO nonlinear resistors is caused by ion migration and phase structure transition of Bi2O3 in the Bi2O3-rich intergranular layer.