摘要
从理论上对CdTe/CdS太阳电池CdS/CdTe异质结的特性进行了研究和讨论 ,结果表明可以简单利用改变CdTe、CdS两种半导体材料的掺杂浓度来改变CdS/CdTe异质结的能带结构。针对不同的能带结构采用了不同的物理模型 ,得到的CdS/CdTe异质结伏安特性曲线有一折点 ,且折点位置随异质结能带结构的变化而变化。
The properties of CdTe/CdS heterojuntion solar cell were theoretically instigated.The results showed that the energy band structure of CdTe/CdS heterojuntion can be changed by the variation only for changed of doped density of CdTe and CdS. The different physical models were used for various energy band structures.There is a kick point from the gain J V characteristics of CdTe/CdS heterojunction,and the position of the kick point depends on the energy band structure.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2003年第2期269-272,共4页
Acta Energiae Solaris Sinica
基金
国家 8 63项目 ( 2 0 0 1AA5 13 0 11)
光电技术系统教育部重点实验室资助课题 (CEDT0 1 0 1)
