期刊文献+

Current sustainability and electromigration of Pd,Sc and Y thin-films as potential interconnects

Current sustainability and electromigration of Pd,Sc and Y thin-films as potential interconnects
下载PDF
导出
摘要 The progress on novel interconnects for carbon nanotube(CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors.The Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects,as it requires electrochemical deposition followed by chemical-mechanical polishing.We report our experimental results on the failure current density,resistivity,electromigration effect and failure mechanism of patterned stripes of Pd,Sc and Y thin-films,regarding them as the potential novel interconnects.The Pd stripes have a failure current density of(8~10)×106 A/cm^2(MA/cm^2),and they are stable when the working current density is as much as 90% of the failure current density.However,they show a resistivity around 210 μΩ·cm,which is 20 times of the bulk value and leaving room for improvement.Compared to Pd,the Sc stripes have a similar resistivity but smaller failure current density of 4~5 MA/cm^2.Y stripes seem not suitable for interconnects by showing even lower failure current density than that of Sc and evidence of oxidation.For comparison,Au stripes of the same dimensions show a failure current density of 30 MA/cm^2 and a resistivity around 4 μΩ·cm,making them also a good material as novel interconnects. The progress on novel interconnects for carbon nanotube (CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors. The Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects, as it requires electrochemical deposition followed by chemical-mechanical polishing. We report our experimental results on the failure current density, resistivity, electromigration effect and failure mechanism of patterned stripes of Pd, Sc and Y thin-films, regarding them as the potential novel interconnects. The Pd stripes have a failure current density of (8 similar to 10)x10(6) A/cm(2) (MA/cm(2)), and they are stable when the working current density is as much as 90% of the failure current density. However, they show a resistivity around 210 mu O.cm, which is 20 times of the bulk value and leaving room for improvement. Compared to Pd, the Sc stripes have a similar resistivity but smaller failure current density of 4 similar to 5 MA/cm(2). Y stripes seem not suitable for interconnects by showing even lower failure current density than that of Sc and evidence of oxidation. For comparison, Au stripes of the same dimensions show a failure current density of 30 MA/cm(2) and a resistivity around 4 mu O.cm, making them also a good material as novel interconnects.
出处 《Nano-Micro Letters》 SCIE EI CAS 2010年第3期184-189,共6页 纳微快报(英文版)
基金 supported by the NSF China (10774002) and the MOST China (No 2006CB932401)
关键词 Carbon nanotube-based field effect transistors Carbon nanotube-based circuit Interconnects Current density ELECTROMIGRATION RESISTIVITY Carbon nanotube-based field effect transistors Carbon nanotube-based circuit Interconnects Current density Electromigration Resistivity
  • 相关文献

参考文献3

二级参考文献8

  • 1崔秀玉,首都医学院学报,1994年,50卷,1页
  • 2王天佑,脑血管疾病基础与临床研究,1993年
  • 3吕国蔚,中国病理生理杂志,1992年,8卷,425页
  • 4魏文汉,病理生理学.上,1990年
  • 5陈锡昌,临床神经解剖学,1990年
  • 6魏保龄,康健,曲非.波起源的分析[J]生理学报,1986(05).
  • 7N. A. Shaw. Effects of low pass filtering on the brainstem auditory evoked potential in the rat[J] 1987,Experimental Brain Research(3):686~690
  • 8张晓光,梁凤和,姬柏春.豚鼠耳蜗电图面神经管慢性引导方法的改进[J].中国应用生理学杂志,1990,6(1):66-68. 被引量:4

共引文献14

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部