ITO界面修饰对量子点发光二极管性能影响研究

Interfacial Modification of Anode ITO for the Performance Improvement of QLED

对量子点发光二极管(QLED)的阳极氧化铟锡(ITO)进行修饰可有效提高器件的性能,分别利用UV光照法和UV光照溶液法对QLED的阳极ITO进行修饰,研究了阳极修饰对降低注入势垒,提高载流子空穴的注入效率的作用。实验结果表明:与UV光照法相比,UV光照溶液法可更有效调节电荷注入势垒,使电子空穴注入更加平衡。在过氧化氢和邻二氯苯的体积掺杂比例为1∶5,UV光照时间为15 min时,器件最高外量子效率达11.97%、最高发光效率达3.54 cd/A和最高亮度达14 194 cd/m2。

Modification of electrodes can effectively improve the performance of Quantum Dot Light Emitting Diodes(QLED).The anode ITO interface is modified with the methods of ultraviolet irradiation and ultraviolet irradiation with solution-immersion,respectively.The influence of interfacial modification of anode ITO on reducing injection barrier and enhancing the injection efficiency of carriers is also studied.Results show that the method of ultraviolet irradiation with solution-immersion can effectively regulate the injection barrier and balance the charge injection,compared to the method of ultraviolet irradiation.After immersing in the solution in which the volume ratio of H_2O_2 and C_6H_4Cl_2 is 1∶5,and illuminating simultaneously by UV for 15 min,the device exhibits a maximum EQE of 11.97%,a maximum current efficiency of of 3.54 cd/A,and a maximum luminance of 14 194 cd/m^2.