摘要
目的探讨应用半导体激光烧灼鼻内镜术后术腔囊泡、肉芽是否能加快术腔上皮化,预防鼻息肉复发。方法对124例(233侧)鼻内镜术后患者在鼻内镜下用半导体激光烧灼术腔囊泡、肉芽,观察术腔上皮化速度及息肉复发情况。结果应用半导体激光烧灼术腔,上皮化速度明显快于一般常规处理,复发率明显降低,两者间差异有显著意义(P<0.01)。结论鼻内镜术后用半导体激光烧灼术腔囊泡、肉芽加快术腔上皮化,可有效地防止鼻息肉的复发。
Purpose The objective of the research is to observe the accelerating of the cavity epithelization with semiconductor laser cauterizating the vesicle and granulation, which can prevent the recurrent of nasal polyp. Methods Cauterizating the vesicle and granulation of 124 patients (233 sides) after nasal sinus endoscope operation with semiconductor laser under the nasal sinus endoscope to observe the rate of the cavity epithelization and the recurrent of nasal polyp. Results The rate of the cavity epithelization with semiconductor laseris is higher than that of the mechanical process and the recurrent of nasal polyp of the former is lower than that of the latter, so there is significant difference between them (P< 0.001). Conclusion It suggested that cauterizating the vesicle and granulation with semiconductor laser after nasal sinus endoscope operation can accelerate the cavity epithelization and effectively prevent the recurrent of nasal polyp.
出处
《中国眼耳鼻喉科杂志》
2003年第3期159-160,共2页
Chinese Journal of Ophthalmology and Otorhinolaryngology
关键词
半导体激光
预防
鼻息肉
复发
临床价值
semiconductor laser
endoscope
post-operation
nasal polyp