摘要
提出了一种低电压CMOS工艺下用于偏置电路中的低漏电流电荷泵电路设计.漏电是输出纹波的主要来源,引入两个不同频率的时钟,通过控制电荷转移器件的开关交替动作来抑制反向漏电流.与传统设计相比,在每级电荷泵单元中增加了两个额外的MOS管,用于维持电荷泵单元中每个晶体管的衬底电位.详细分析了时钟和寄生所引入的非理想效应,并在0.35μm工艺下设计了一款电荷泵电路.仿真结果表明,所提出的9级电荷泵在1.4 V电源电压下能够实现13.4 V直流输出和0.17 mV纹波电压.这种电荷泵结构具有更好的噪声性能,可用于给传感器电路提供稳定的电压偏置.
A low ripple charge pump in low-voltage CMOS process is proposed for the bias circuit.Two clocks with different frequency are utilized to alternately turn on and off the charge-transfer devices to suppress the return-back leakage current, which could improve the output ripple. Compared with conventional designs, two more MOSFETs are added to each pump stage to maintain the correct bulk voltage of all MOSFETs. The non-ideal effects introduced by clock and technology parasitic are analyzed in detail, and the circuit has been designed with 0.35 μm technology. The simulation results show that the proposed nine-stage charge pump can obtain a 13.4 V DC voltage output with 0.17 mV ripple wave under VDD=1.4 V. With the improved noise performance, the proposed charge pump circuit is able to provide a stable high voltage bias for sensors.
作者
徐江涛
周益明
高志远
Xu Jiangtao;Zhou Yiming;Gao Zhiyuan(School of Microelectronics,Tianjin University,Tianjin 30072,China)
出处
《南开大学学报（自然科学版）》
CAS
CSCD
北大核心
2019年第1期21-28,共8页
Acta Scientiarum Naturalium Universitatis Nankaiensis
基金
Supported by the National Natural Science Foundation of China(61604107)
Tianjin Research Program of Application Foundation and Advanced Technology(15JCQNJC42000)
关键词
电荷泵
低漏电流
低纹波
寄生效应
charge pump
low-leakage
low-ripple
element effect
