摘要
对掺C和Ge的Fe Si Mn基热电材料的电学性能研究表明,相对于未掺的Fe Si Mn基热电材料,掺C样品的电阻率降低,但热电动势率增加。掺Ge样品的电阻率有所升高,但热电动势率增加更快,因此掺C、Ge样品有较高的功率因子,比未掺样品提高近1倍。
The transport properties of FeSiMn based thermoelectric materials doped with C, Ge were studied. It was showed that FeSiMnC alloys have lower electrical resistivities and higher Seebeck coefficients than FeSiMn alloy and as a result have larger power factors. It was observed that doping germanium in FeSi2 based alloys also have high power factors.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2003年第3期306-307,310,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(59971044)