摘要
半导体器件的性能受晶体中缺陷的影响极大。慢降温工艺是一种简单而有效的消除晶体缺陷的方法。本文根据空位和点缺陷的复合,导出了最佳降温率。文中定性地分析了决定最佳降温率的几个因素,指出:最佳降温率与点缺陷的密度成正比;最佳降温率应随温度之下降而放慢。
From the anihilations of the vacancies and the point defects, the optimum decreasing rate of slowly decreasing temperature technology is derived. In the present paper, some factors which decide the optimum decreasing rate of temperature are analysed and shown that the optimum decreasing rate of temperature is proportional to the density of the point defect; optimum decreasing rate of temperature must decreses as temperature decreasing.
出处
《内蒙古大学学报(自然科学版)》
CAS
1979年第1期53-56,共4页
Journal of Inner Mongolia University:Natural Science Edition