低温金属诱导横向晶化多晶硅材料和器件技术

Low-Temperature Metal-Induced Laterally Crystallized Polycrystalline Silicon Material and Device Technology

使用金属镍诱导非晶硅晶化 (MIC :metal inducedcrystallization)技术 ,获得了低温 (<5 5 0℃ )多晶硅 .通常在镍覆盖区以外的晶化硅更加有用 ,这一技术被称为金属诱导横向晶化 (MILC :metal inducedlateralcrystallization)技术 .通过对结晶动力学过程和材料特性的研究 ,提出了可同时适用于镍覆盖区和相连非覆盖区金属诱导结晶的同一晶化机制 .虽然MILC多晶硅的材料特性明显优于固相晶化多晶硅的材料特性 ,薄膜晶体管沟道中存在MIC/MILC的界面所形成的横向晶界会明显的降低其性能 .若将这些界面从沟道中去除掉 ,即可获得可满足液晶和有机发光二极管等显示器进行系统集成所需的高性能器件 .

Polycrystalline silicon (poly Si) has been obtained using low temperature (<500℃),nickel based,metal induced crystallization (MIC) of amorphous silicon.Because crystallization outside of the nickel covered regions is not only possible but also commonly desired,the technique of metal induced lateral crystallization (MILC) is often utilized.Based on studies on the crystallization kinetics and material characteristics,a unified mechanism is proposed for MIC both under and outside of the nickel coverage.While the material quality of MILC poly Si is significantly better than that of solid phase crystallized poly Si,the performance of MILC poly Si thin film transistors (TFTs) is quite sensitive to and degraded by the inclusion of MIC/MILC and MILC/MILC interfaces in the device channel regions.When such interfaces are eliminated,excellent TFTs are obtained that can be used to realize high performance systems on panels,including sophisticated displays based on liquid crystals or organic light emitting diodes.