一种新型PNP晶体管的数值分析

A NUMERICAL ANALYSIS FOR A NEW TYPE TRANSISTOR

从基本半导体方程出发 ,用数值模拟方法得到了一种新型晶体管内部的电场分布 ,载流子浓度分布和输出特性 .晶体管的有效基区宽度约为 50nm .证明了这种晶体管有效基区中的电场是载流子输运的主要机制 ,它的输出特性与MOS场效应管的输出特性相似 .这种晶体管有望用作数字电路中的高速器件 .

Through numeral simulation, the inner electric field, carrier distribution and output property of a new type PNP transistor are obtained. The width of effective base region of the transistor is about 50 nm. It is proved that the electric field in the effective base region is the main cause for the minority carrier to move. The output property of the transistor is almost the same as that of MOS field effect transistor. This transistor is expected to be a high speed device in digital circuits.