摘要
对 a-Ge/Al 双层膜在退火过程中出现的分形晶化现象进行了模拟研究。结果显示,各团簇的生长呈现出各向异性。分形晶化是随机相继触发形核的结果。这种多中心分形晶化图形显示出多重分形特征,用盒计数法得到了模拟图形的多重分形谱。
The fractal growth in a-Ge/A1 bilayer film during annealing has been studied by computer simulation.The fractal crystallization is due to the process of random successive nucleation.The multiple cluster pattern shows multifractal behavior.By using the box-counting method the multifractal spectrum has been obtained.
出处
《阜阳师范学院学报(自然科学版)》
2002年第1期16-18,共3页
Journal of Fuyang Normal University(Natural Science)