反应堆快中子辐照硅的深能级及退火分析

Analysis of Deep Energy Levels and its Annealed Features in Silicon by Fast Neutron Irradiation in Nuclear Reactor

利用反应堆快中子辐照控制电力半导体器件的少子寿命 ,器件电特性优于现有的扩金、扩铂、电子辐照和Co60 γ辐照等少子寿命控制技术。介绍了反应堆快中子辐照场特性及其在N型NTD硅中产生的深能级位置及退火特性 ,论证了主要复合能级应是Ec- 0 .4 4eV能级 。

Fast neutron irradiation in nuclear reactor is used for controlling the minority carrier lifetime of power semiconductors. The effects of this irradiation are most superior than gold, platinum diffusion and electron Co 60 γ ray irradiation. This paper introduces the energy spectrum of fast neutron irradiation field in reactor. Emphatically the deep energy levels and its features in N type NTD silicon by the fast neutron irradiation are discussed, and the dominant energy levels with Ec-0.44eV are demonstrated. Meantime the importance of other energy levels is discussed for improving the on state voltage drop.