碳化硅MOSFET反型沟道迁移率的研究

Study on Inversion Channel Mobility of Silicon Carbide MOSFET

SiCMOSFET是制作高速、低功耗开关功率器件的理想材料,然而,制作反型沟道迁移率较高的SiCMOSFET工艺尚未取得满意结果。通过在NO中高温退火可以显著地提高4H-SiCMOSFET的有效沟道迁移率;采用H2中退火制作的4H-SiCMOSFET阈值电压为3.1V,反型沟道迁移率高于100cm2/Vs的栅压的安全工作区较宽。N2O退火技术由于其的安全性而发展迅速并将取代NO。

Silicon carbide(SiC)metal-oxide-semiconductor field-effect-transistor(MOSFET)is expected as a promising candidate for a high-speed and low-loss switching power de-vice.However,there have been few satisfactory results regard-ing the fabrication of SiC MOSFET with high inversion channel mobility.The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.Use of N 2 O has been pursued and effectively developed as an alternative to NO because of it's safety.