工艺参数对RF磁控溅射沉积铝掺杂氧化锌薄膜特性的影响

Effect of Process Parameters on the Properties of Al-doped ZnO Thin Film Prepared by RF Magnetron Sputtering

ZnO :Al(ZAO)是一种N型半导体薄膜材料 ,具有优良的光电特性 ,如低的电阻率和高的可见光透过率。本文利用射频磁控溅射技术在无机玻璃衬底上制备了ZAO透明导电薄膜 ,研究了工艺参数对其结构和光电特性的影响。结果表明原位制备的薄膜经热处理后具有c轴择优取向的六角纤锌矿结构 ,晶粒垂直于衬底方向柱状生长。薄膜的最小电阻率和可见光透过率分别为 8 7× 10 - 4 Ωcm和 85

ZnO:Al is a kind of N type semiconductor material with low resistivity and high transmittance in the visible region.ZAO thin films were deposited on glass substrate by RF magnetron sputtering and effects of process parameters on the structural, optical and electrical properties of ZAO films were studied.The results show that the as-deposited post-annealed ZAO film are preferred orientation of c axis,(002)direction of the hexagonal crystal structure perpendicular ot the substrate surace.The minimum resistivity and the average transmittance is 8.7×10 -4Ωcm and above 85% respectively.