980nm脊型波导激光器腔面非注入区的研究

The Investigation of 980nm Ridge Waveguide Lasers with Current Non - injection Regions by Proton Implantation

报导了质子注入技术在提高980nm半导体激光器可靠性上的应用。p-GaAs材料经过质子注入后获得高的电阻率。在距离腔面25μm的区域内进行质子注入,由此形成腔面附近的电流非注入区。腔面附近非注入区减少了腔面载流子的注入,因此减少了非辐射复合的发生,提高了激光器的灾变性光学损伤(COD)阈值。应用质子注入形成腔面非注入区的管芯的平均COD阈值功率达到268mW,而应用常规工艺的管芯的平均COD阈值功率为178mW。同常规工艺相比,应用质子注入形成腔面非注入区技术使管芯的COD阈值功率提高了50％。

The paper introduces the technology of proton implantation for improving the reliability of 980nm semiconductor lasers. After proton implantation, p - GaAs will obtain higher resistivity than before. About 25μm-long non-injection regions are introduced near both facets, where the injection current is blocked by high resistivity area. The current non-injection regions could reduce carriers inject to facets, and the rate of the nonradiative recombination would be reduced. So the Catastrophic Optical Damage(COD) level will higher than before. The average of the COD level of laser diodes with non-injection regions is 268mw,as well as the average of COD level of laser diodes without non-injection regions is 178mw. So compared to the conventional LD' s, the COD level has been improved 50% for the LD' s with non-injection regions by proton implantation.