摘要
设计了一个与n阱工艺兼容的高精密CMOS带隙基准电压源电路。该电路实现了一阶PTAT温度补偿,并具有好的电源抑制比。SPICE模拟和测试结果表明,其电源抑制比可达到60dB,在20~70°C范围内精度可达到60ppm/°C。
A high precision bandgap voltage reference circuit is presented in the paper, which is compatible with nwell CMOS technology The circuit fulfills the firstorder PTAT (Proportion To Absolute Temperature) temperature curvature compensation Results from HSPICE simulation and chip test show that the circuit has a power supply rejection ratio (PSRR) of 60 dB and an accuracy of 60 ppm/°C in the temperature range from 20 °C to 70 °C
出处
《微电子学》
CAS
CSCD
北大核心
2003年第3期255-258,261,共5页
Microelectronics