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一种高精密CMOS带隙基准源 被引量:10

A High Precision CMOS Bandgap Voltage Reference Circuit
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摘要  设计了一个与n阱工艺兼容的高精密CMOS带隙基准电压源电路。该电路实现了一阶PTAT温度补偿,并具有好的电源抑制比。SPICE模拟和测试结果表明,其电源抑制比可达到60dB,在20~70°C范围内精度可达到60ppm/°C。 A high precision bandgap voltage reference circuit is presented in the paper, which is compatible with nwell CMOS technology The circuit fulfills the firstorder PTAT (Proportion To Absolute Temperature) temperature curvature compensation Results from HSPICE simulation and chip test show that the circuit has a power supply rejection ratio (PSRR) of 60 dB and an accuracy of 60 ppm/°C in the temperature range from 20 °C to 70 °C
出处 《微电子学》 CAS CSCD 北大核心 2003年第3期255-258,261,共5页 Microelectronics
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参考文献4

  • 1Nicollini G,Senderowicz D. A CMOS bandgap reference for differential signal processing [J]. IEEE J Sol Sta Circ, 1991; 26 (1): 41-50.
  • 2Pease R. The design of band-gap reference circuits:trials and tribulations [A]. IEEE 1990 Bipolar Circuitsand Technology Meeting [C]. 1990. 214-218.
  • 3Johns D, Martin K. Analog integrated circuit design[M]. John Wiley & Sons. 1997. 353-364.
  • 4Ferro M. A floating CMOS bandgap reference for differential applications [J]. IEEE J Sol Sta Circ, 1989;24(6) : 690-691.

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