1Katsayoshi Ina. New Solution Path For Cu/LOw -κ CMP Process for a Low Cost of Ownership[A]. SEMICON China 2003 CMP Technical symposium [C].Shanghai:SEMICON,2003.113-118.
2Yuz-huo LI. Abrasive particle Innovation for Copper CMP[A]. SEMICON China 2003 CMP Technical Symposium[C].Shanghai: SEMICON, 2003.3-7.
3Jong-heum LIM. Development and Application of The Slurry Including Colloidal Silica and Hydrogen Peroxide for Copper CMP [A]. SEMICON China 2003 CMP Technical Symposium[C]. Shanghai: SEMICON, 2003. 142-149.
4Tomohisa Konno. Specially Designed Abrasives for Cu CMP slurry [A]. SEMICON China 2003 CMP Technical Symposium[C]. Shanghai: SEMICON, 2003. 131-136.
5Guang-wei Wu, Thomas E. Hard porous Pad for Cu CMP[A]. SEMICON China 2003 CMP Technical Symposivm[C].Shanghai: SEMICON, 2003.95-100.
7Michael R.Oliver.New pad and subpad staeks For CMP:Uniformity and Planarization [A]. SEMICON China 2003 CMP Technical Symposivm [C]. Shanghai: SEMICON,2003.85-101.
8Jae Seek Lee. A study of W CMP Slurry;Effects of Abrasive Size and Chemical Additives [A]. SEMICON China 2003 CMP Technical Symposivm[C]. Shanghai: SEMICON, 2003.151-155.
9Robert Small, philippe chelle. Post CMP cleaning for copper, STI and Tungsten[A]. SEMICON China 2003 CMP Technical Symposivm[C]. Shanghai: SEMICONL, 2003.22-28.
