Co/a-GeSi/Ti/Si多层薄膜固相反应外延生长CoSi_2薄膜

Epitaxial Growth of CoSi_2 on Si(100) Substrate by Co/GeSi/Ti/Si Multilayer Solid Phase Reaction

研究了在 Co/Ti/Si结构中加入非晶 Ge Si层对 Co Si2 /Si异质固相外延的影响 ,用离子束溅射方法在Si衬底上制备 Co/Ge Si/Ti/Si结构多层薄膜 ,通过快速热退火使多层薄膜发生固相反应。采用四探针电阻仪、AES、XRD、RBS等方法进行测试。实验表明 ,利用 Co/Ge Si/Ti/Si固相反应形成的 Co Si2 薄膜具有良好的外延特性和电学特性 ,Ti中间层和非晶 Ge Si中间层具有促进和改善 Co Si2 外延质量 ,减少衬底耗硅量的作用。Ge原子的存在能够改善外延 Co Si2

The effect of amorphous GeSi layer interposed between Co and Ti layers on Si(100) substrate on the solid phase heteroepitaxy of CoSi 2/Si structure is investigated.Co/GeSi/Ti multilayers have been sputtered on Si substrates.Epitaxial CoSi 2 film with good electric properties was formed after rapid thermal annealing.When the thickness of the interposed GeSi films changed from 0 to 10 nm,the formed CoSi 2 film always has the favorable epitaxial quality and stable low electrical resistivity.At low annealing temperature(<800 ℃),Ti will combine with Co?O or Si to form ternary compounds such as Co 2Ti 4O and Ti 2Co 3Si,which will act as diffusion barrier and promote the epitaxial growth of CoSi 2 film.The GeSi interlayer will reduce the consumption of substrate Si during CoSi 2 formation and the small amounts of Ge will improve the mismatch between epitaxial CoSi 2 and substrate Si.