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性能优良的RCA微波功率晶体管

RCA Microwave Power Bipolar Transistor with Excellent Performance
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摘要 首次采用多晶硅发射区 RCA技术制备出微波功率晶体管。在工作频率为 3 .1 GHz时 ,该器件输出功率达到 6W,功率增益达到 1 0 d B。与普通多晶硅发射区 HF晶体管相比 ,此种晶体管具有电流增益 h FE随温度变化小、并且在一定温度下达到饱和的优点 ,从而可以在一定程度上抑制微波双极功率晶体管由于温度分布不均匀导致的电流集中。文中还讨论了不同的杂质激活条件对 A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time. The device gives a performance of 6 W output power and 10 dB gain at 3.1 GHz. Compared to normal poly-silicon emitter(HF) transistor, this device has a small temperature coefficient of h FE, and the h FE can arrive at its saturation value at a specific temperature. This characteristics of RCA transistor can suppress the effect of current crowding arosen from the nonuniform temperature distribution. The influence on high temperature annealing on the RCA transistor's temperature characteristics and microwave performance was discussed also.
作者 蔡勇 张利春 高玉芝 金海岩 叶红飞 张树丹
机构地区 北京大学微电子学研究所 南京电子器件研究所
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2003年第2期178-182,共5页 Research & Progress of SSE
关键词 RCA 微波功率晶体管 多晶硅发射区 氯化层 电流增益 双极功率晶体管 直流增益 microwave power transistor poly-silicon emitter oxide current gain
分类号 TN322.8 [电子电信—物理电子学]
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参考文献12

  • 1张利春,叶红飞,金雪林,高玉芝,宁宝俊.掺砷多晶硅发射极RCA晶体管[J].Journal of Semiconductors,2000,21(7):697-704. 被引量：2
  • 2叶红飞,高玉芝,金海岩,罗葵,宁宝俊,莫邦燹,张广勤,张利春.77K下工作的双层多晶硅发射区RCA器件和电路[J].Journal of Semiconductors,2001,22(9):1207-1211. 被引量：1
  • 3Ashburn P, Soerowirdjo B. Comparison of experimental and theoretical results on polysilicon emitter bipolar transistors. IEEE Trans Electron Devices,1984 ;ED-31 (7) : 853-860.
  • 4Post I R C, Ashburn P, Wolstenholme G R. Polysilicon emitters for bipolar transistors: a review and revaluation of theory and experiment. IEEE Trans Electron Devices, 1992; ED-39(7):1717-1730.
  • 5DeGrooff H C, DeGroot H H. The SIS tunnel emitter: a theory for emitters with thin interface layers. IEEE Trans Electron Deices, 1979;ED-26(11):1771-1776.
  • 6Zhang L C, Jin H Y, Ye H F, et al. Improvement of RCA transistor using RTA annealing after the formatin of interfacial oxide. IEEE Transactions on Electron Devices, 2002; 49(6):1075-1076.
  • 7Halen P V, Pulfrey D L. High-gain bipolar transistors with polysilicon tunnel junction emitter contacts.IEEE Trans Electron Devices, 1985 ; ED-32 (7) : 1307-1313.
  • 8Ma PX, Zhang L C, Zhao B Y, et al. An analytical model for determining carrier transport mechanism of polysilicon emitter bipolar transistors. IEEE Trans Electron Devices, 1995;ED-42(9),1789-1797.
  • 9Ma P X, Zhang L C, Wang Y Y. Analytical theory for temperature characteristics of polysilicon emitter transistors ( PET ). Chinese Journal of Semiconductors, 1996; 17(2):105-112.
  • 10Hamel J S, Roulston D J, Selvakumar C R. Trade-off between emitter resistance and current gain in polysilicon emitter bipolar transistors with intentionally grown interfacial oxide layers. IEEE Electron Device Letters, 1992;13(6) :332.

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固体电子学研究与进展
2003年 第2期

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