高成品率砷化镓DPDT单片射频开关

High Yield GaAs DPDT RF Switch MMIC

采用砷化镓 76mm 0 .7μm离子注入 MESFET工艺技术研制出手机用砷化镓 DPDT单片射频开关(以下简称单片开关 )。该单片开关面积 1 3 1 0 μm× 1 2 5 0 μm,总栅宽 3 6mm,工作频率 DC～ 2 GHz,1 GHz下插入损耗 IL小于 0 .5 2 d B,隔离度 ISO大于 1 7d B,驻波 VSWR≤ 1 .3 ,2 GHz下 IL小于 0 .7d B,ISO大于 1 1 d B,驻波≤ 1 .3 ,反向三阶交调 PTOI优于 64 d Bm,1 W射频信号下的栅漏电小于 2 0 μA。连续五批共 60片的统计结果表明 ,该单片开关圆片上芯片的直流成品率最低 84 % ,最高 96% ;微波参数成品率在 75 %～ 86%之间 ,代表着国内 Ga

We developed a GaAs RF DPDT switch MMIC technology which can be used in handphone using 76 mm 0.7 μm ion implantation MESFET. This MMIC with chip area of 1 310 μm×1 250 μm and the periphery of 36 mm has the following performances: IL≤0.52 dB,ISO≥17 dB,VSWR≤1.3 at 1 GHz and reverse third-order intermodulation intercept P TOI≥64 dBm. The leakage current under RF one watt is below 20 μΑ. Statistical result under consequent 5 batches 60 wafers talally exhibits DC yield ranging from 84% to 96%, and RF yield ranging from 75% to 86%.