注氢硅中微结构缺陷的TEM观察

TEM Observation of Microdefects in Hydrogen-Implanted Silicon Wafers

通过透射电子显微镜观察到注氢硅片中存在损伤带 ,损伤带的位置和注入氢的分布几乎一致 ,推断损伤带是由于氢的注入引起的。损伤带内主要以平行于正表面的 {111}面状缺陷为主 ,另外还有斜交于正表面的 {111}面状缺陷以及 {10 0 }面状缺陷 ,这是由于氢朝能量低的位置的迁移聚集而形成的。在损伤带的中间还可见到晶格紊乱团块和空洞 ,这是由于损伤带中间存在高浓度的氢和高密度的面状缺陷而导致形成的。

The cross sectional plane of hydrogen implanted silicon wafer was investigated with TEM. It was observed that there is a damaged layer in the hydrogen implanted silicon wafer, the depth of which is more like the depth of implanted hydrogen .It can be inferred that the formation of damaged layer is contributed to implanted hydrogen. In the damaged layer, there mainly appear {111} planar defects parallel to top surface. In addition, there is another group of {111}planar defects and {100} planar defects. The formation of planar defects is the results of movement and congregation of hydrogen into sites of low energy. In the middle area of damaged layer, disorder conglomeration and voids can be found, which are contributed to existence of hydrogen of higher concentration and more planar defects.