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混合信号电路的衬底电阻网络模型 被引量：3

Automatic Generation of Substrate Resistor Network for Mixed-Signal IC's
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摘要 　通过等效电路数值提取方法,提出了衬底电阻网络模型,该模型具有清晰的物理意义,可获得很好的精度,有利于混合信号电路衬底耦合效应的模拟。将该模型应用于规则和不规则区域的电阻值提取,用Hspice电路模拟器对电阻网络进行模拟,与Medici器件模拟器模拟结果和解析公式结果进行比较,证明了该模型的准确性。 Based on the technique for numerical extraction of equivalent circuits, a substrate resistor network model is proposed in the paper. Having clear physical meaning and good accuracy, the model facilitates simulation of the substrate coupling effect for mixedsignal IC's.The model is used for the resistor extraction of regular and irregular regions.The resistor network is simulated using Hspice circuit simulator and the results are compared with those from simulation using Medici device simulator and analytic equations, thereby the accuracy of the model is analyzed.
作者 田洪宇 余志平 田立林 张文俊
机构地区 清华大学微电子学研究所
出处 《微电子学》 CAS CSCD 北大核心 2003年第1期1-4,共4页 Microelectronics
基金 国家重点基础研究项目(GG200036502)
关键词 混合信号电路 衬底电阻 网络模型 电路提取 衬底耦合 芯片 Substrate coupling Resistive network model Simulation Circuit extraction
分类号 TM13 [电气工程—电工理论与新技术]
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参考文献4

  • 1Pacelli A, Mastrapasqua M, Luryi S. Generation of equivalent circuits from physics-based device simulation [J]. IEEE Trails Computer-Aided Design of Integrated Circuits and System, 2000; 19 (11) : 1241-1250.
  • 2Samavedam A, Sadate A, Mayaram K, et al. A scalable substrate noise coupling model for design of mixed-signal IC's [J]. IEEE J Sol Sta Circ, 2000; 35(6) : 895-904.
  • 3Weste N , Eshragian K. Principles of CMOS VLSI design: a systems perspective [M]. 2nd edition,Boston MA: Addison-Wesley, 1993. 176-180.
  • 4Verghese N K, Schmerbeck T J,Allstot D J. Simulation techniques and solutions for mixed-signal coupling in integrated circuits [M]. Norwell MA: Kluwer, 1995. 235-240.

同被引文献15

  • 1艾伟伟,郭霞,刘斌,董立闽,刘莹,宋颖娉,沈光地.电流拥挤效应对GaN基发光二极管可靠性的影响[J].激光与红外,2006,36(6):491-494. 被引量：8
  • 2朱樟明,杨银堂,刘帘曦,吴晓鹏.一种混合信号集成电路衬底耦合噪声分析方法[J].固体电子学研究与进展,2007,27(1):69-73. 被引量：3
  • 3Zhang C J,Wang J F,et al. Grain size effects of SnO2 varistor induced by doping pr[C]. The Third China International Conference on High-performance Ceramics, 2004,5.
  • 4KIM H,PARK S J,HWANG H.Effects of current spreading on the performance of GaN-based light-emitting[J].IEEE Transaction on Electron Devices,2001,48(6):1065-1069.
  • 5KIM H,LEE J M,HUH C,et al.Modeling of a GaN-based light-emitting diode for uniform current spreading[J].Appl Phys Lett,2000,77:1903-1904.
  • 6KIM H,PARK S J,HWANG H,et al.Lateral current transport path,a model for GaN-basedlight-emitting diodes:applications to practical device designs[J].APL,2002,81(7):1326-1328.
  • 7KIM H,PARK S J,HWANG H.Design and fabrication of highly efficient GaN-based light-emitting diodes[J].IEEE Transaction on Electron Devices,2002,49(10):1715-1722.
  • 8EBONG A,ARTHUR S,DOWNEY E,et al.Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading[J].SSE,2003,47:1817-1823.
  • 9GUO X,SCHUBERTA E F.Current crowding in GaN/InGaN light emitting diodeson insulating substrates[J].Journal of Applied Physics,2001,90(8):4191-4195.
  • 10GUO X,SCHUBERTA E F.Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates[J].APL,2001,78(21):3337-3339.

引证文献3

微电子学
2003年 第1期

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