TIGBT的瞬态解析模型

A Transient Analytical Model for Trench Insulated Gate Bipolar Transistors

提出了一种含缓冲层的沟槽绝缘栅双极晶体管(TIGBT)的瞬态解析模型。该模型不仅考虑到TIGBT的高掺杂缓冲层处于小注入状态,分析了缓冲层对TIGBT关断特性的影响,而且还考虑了槽底电子积累层引起的基区电导调制作用的影响。通过与数值模拟结果的比较,表明该模型能准确地描述TIGBT瞬态时的物理特性。

A transient analytical model for Trench Insulated Gate Bipolar Transistors (TIGBT) is presented in this paper This model takes into account not only the turnoff characteristics influenced by heavilydoped buffer layer working in lowlevel injection condition, but also the onstate characteristics influenced by trench gate that modulates the conduction of base A comparison with numerical simulation shows this analytical model is valid for circuit simulation