集成电路芯片的工艺诱生缺陷

Process Induced Defects on Processing Chips

调研了三条100～150mm集成电路生产线上IC芯片的工艺诱生缺陷。研究表明,这些IC生产线上存在三种影响IC成品率的主要诱生缺陷,离子注入诱生弗兰克不全位错,薄膜应力和杂质收缩应力引起的位错和隔离扩散区的位错。前二种缺陷存在于MOS电路,后一种存在于双极型电路。弗兰克不全位错起因于离子注入损伤诱生的氧化诱生层错(OISF),薄膜应力和杂质收缩应力引起的位错和隔离扩散区的位错都与薄膜应力和高浓度替位杂质的收缩应力有关。同时,提出了减少这几类缺陷密度的工艺途径。

Process induced defects on 100150 mm chips in three IC fablines in Shanghai were investigated There exist 3 types of process induced defects that affect the yields of IC's: Frank partial dislocation induced by ion implantation, dislocations caused by thinfilm stress and compress stress of the impurities, and dislocations in the separated diffusion zone The former two defects are seen in MOS IC's, while the latter can be observed in bipolar IC's Frank partial dislocations are caused by oxidation induced stack fault (OISF) due to ion implantation damage The latter 2 types of dislocations are both related to film stress and compress stress caused by high concentration substitution impurities Approaches to reducing defect density are proposed in the paper