摘要
介绍了一种快速电压变换器的电路、版图及工艺设计。该电路采用多晶硅发射极自对准工艺制作,获得了小于50ns的输入输出延迟时间。该电路可广泛应用于GaAsFET功率放大器的控制电路中。
A fast voltage converter has been developed, and its circuit, layout and process design are reviewed in the paper A polysilicon emitter selfalignment technique is used for the device An input/output delay time less than 50 ns is achieved The circuit can be widely used in the controller of GaAs FET power amplifiers
出处
《微电子学》
CAS
CSCD
北大核心
2003年第2期160-162,共3页
Microelectronics