摘要
随着纳米加工技术的发展 ,纳米结构器件必将成为将来的集成电路的基础 .本文介绍了几种用电子束光刻、反应离子刻蚀方法制备硅量子线、量子点和用电子束光刻、电子束蒸发以及剥离技术制备纳米金属栅的工艺方法 ;用这种工艺方法在P型SIMOX硅片上成功制造的一种单电子晶体管 ,在其电流电压
With the development of nano-fabrication techniques, nano-structure devices will be the basis of the next generation integrated circuits. We report process of Si quantum wire and dot based on EBL and RIE processes and process of nano-structure metal gate based on EBL, electron beam evaporation and lift-off techniques. Single electron transistors (SETs) on p-type SIMOX substrates were also fabricated based on the processes. Coulomb blockade and single electron tunneling are observed in the SETs.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2003年第2期301-302,共2页
Acta Electronica Sinica
基金
香港RGC的支持 (No HKUST60 86/ 97E)
西安理工大学基金 (No 2 1 0 2 0 1 )