摘要
低温分子束外延技术的应用 ,使高浓度掺杂的III -V族稀磁半导体得以成功制备 ,与现代半导体器件兼容 .本文概要地回顾了磁性半导体的发展历史 ,介绍了目前的实验 。
A novel material-III-V diluted magnetic semiconductors, has been successfully prepared by low temperature molecular beam epitaxy,compatible with contemporary semiconductor apparatus. In this paper, we reviewed the history of magnetic semiconductors, and given a simple description of present development in experiment, theory and application of DMS.
出处
《河南师范大学学报（自然科学版）》
CAS
CSCD
2003年第2期50-53,共4页
Journal of Henan Normal University(Natural Science Edition)
基金
河南省自然科学基金资助项目 (编号 :0 1110 5 10 0 0 )
