五氧化二钽薄膜的I—V特性

I-V characteristics of high dielectric constant tantalum oxide films

采用直流脉冲反应磁控溅射方法制备了高介电常数五氧化二钽(Ta_2O_5)薄膜。利用Ta/Ta_2O_5/Ta的MIM电容结构分析了Ta_2O_5的电学性能,研究了上电极面积对I-V特性的影响、I-V曲线的对称性和零点偏移以及薄膜缺陷和基底粗糙度对MIM电学性能的影响。结果表明,随着上电极面积增大,电容的漏电流密度增大,击穿场强减小。氧化钽薄膜中缺陷的存在和粗糙度增大容易引起漏电流增大,击穿强度降低。当上电极直径为1mm时,MIM电容的性能最佳:击穿强度为2.22MV/cm,漏电流密度低于1×10^(-8)A/cm^2。

Tantalum Pentoxide (Ta2O5) films were prepared by pulsed DC reactive magnetron sputtering method. Ta/Tantalum Pentoxide/Ta (MIM) structure was fabricated to investigate the I-V characteristics of tantalum oxide films. I-V characteristics of MIM with different top-electrode areas were investigated. The results showed that the electrical properties get deterioration with the increase of top-electrode area. Zero shifting of I-V curves was found. The study showed that the roughness of the substrate and films, and defects in the films greatly affected the quality and I-V characteristics of MIM capacitors.