有机发光器件的低温氮化硅薄膜封装

Low temperature deposited PECVD SiN_x films applied in OLED packaging

利用等离子体化学气相沉积(PECVD)技术,采用不同的沉积条件(20～180℃的基板温度范围和10～30W的射频功率)制备了氮化硅薄膜,研究了沉积条件对氮化硅薄膜性质和防水性能的影响。实验发现随着基板温度的增加,氮化硅薄膜的密度、折射率和Si/N比相应增加,而沉积速率和H含量相应减少;随着射频功率的增加,氮化硅薄膜的沉积速率、密度、折射率和Si/N比相应增加,而H含量相应减少。水汽渗透实验发现即使基板温度降低为50℃,所沉积的氮化硅薄膜仍然具有良好的防水性能。实验结果表明低温氮化硅薄膜可以有效地应用于有机发光器件(OLED)的封装。

Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx films deposited at the substrate temperatures from 20℃to 180℃and at the RF powers from 10W to 30W were investigated. With the increment of substrate temperature, the density, refractive index and Si/N ratio of SiNx film increase, but deposition rate and H content decrease. With the increment of RF power, the deposition rate, density, the refractive index and Si/N ratio of SiN film increase, but H content decreases. Water vapor permeation (WVP) measurement shows that at the low substrate temperature such as 50oC, the moisture resistance of SiNx films keeps quite good. It suggest that SiNx films deposited at low tempera- ture can be applied in Organic Light Emitting Devices (OLED) packaging effectively.