摘要
重点介绍器件进入纳米尺度后出现的MOSFET/SOI器件的新结构,如超薄SOI器件、双栅MOSFET、FinFET和应变沟道等SOI器件,并对它们的性能进行了分析。
MOSFET devices are scaling into 100nm regime with the high-speed development of micro- electronics. In this paper, new nanometer SOI-MOSFET devices including ultra-thin SOI devices, double-gate MOSFET, FinFET and strained channel MOSFET are introduced systematically and their performance are analyzed as well.
出处
《功能材料与器件学报》
CAS
CSCD
2003年第2期222-226,共5页
Journal of Functional Materials and Devices