纳米MOSFET/SOI器件新结构

New devices architecture of nanometer MOSFET/SOI

重点介绍器件进入纳米尺度后出现的MOSFET/SOI器件的新结构,如超薄SOI器件、双栅MOSFET、FinFET和应变沟道等SOI器件,并对它们的性能进行了分析。

MOSFET devices are scaling into 100nm regime with the high-speed development of micro- electronics. In this paper, new nanometer SOI-MOSFET devices including ultra-thin SOI devices, double-gate MOSFET, FinFET and strained channel MOSFET are introduced systematically and their performance are analyzed as well.