电子束蒸发制备纳米硅锥及其场发射性能研究

Preparation and field-emission property of nanoscale silicon on different substrates by using electron beam evaporation

应用超高真空电子束蒸发方法,以铁作为催化剂,在硅和多孔硅衬底上生长纳米Si锥阵列。采用原子力显微镜表征生长在不同衬底上纳米硅的形貌特征,测试和比较了不同衬底上纳米硅的电子场发射性能。实验结果表明用这种方法形成了高度为10～35nm的锥状纳米结构,并且这些纳米硅锥阵列的场发射性能良好。比较生长不同衬底上的纳米锥形貌与场发射性能,发现多孔硅衬底上更适合生长这种纳米硅锥。

Silicon nanorods (about 10-35nm height) on silicon and porous silicon substrates were synthesized by using Ultra-high vacuum electron beam evaporation with Fe catalyst. Atomic force microscopy was used to estimate the dimension and characterize the morphology of the silicon nano- clusters. The electron field emission was used to reveal the property of silicon nanorods grown on different substrates. The nanorods emitters display good field emission properties. It is also found that the porous silicon substrate is more suitable than silicon substrate to grow silicon nanoclusters.