摘要
本文介绍用直流磁控S枪在H_2/Ar混合气体中反应溅射单晶硅靶淀积a-Si:H光电导薄膜的制备工艺。研究了用这种技术制备的a-Si:H薄膜的光学特性(透射率光谱、光学常数和光学带隙等)、晶相结构(用电子衍射图谱)、红外吸收光谱和光电导性能。并讨论了制备工艺条件与薄膜微结构和性能的关系。
The preparation and sputtering characteristics of hydrogenated amorphous silicon(a-Si: H) by DC S-gun magnetron sputtering of a monocrystalline silicon target in H_2/Ar plasma (reactive sputtering) have been studied. Optical properties including transmission spectra, optical constants and optical band gap, crystalline structure, infrared spectrometry and photoconductivity of the films deposited by S-gun magnetron sputtering were measured and studied. The dependence of the microstructure and properties of a-Si: H films on the deposition. conditions has also been discussed.
出处
《激光与红外》
CAS
CSCD
北大核心
1992年第5期53-58,共6页
Laser & Infrared
