用加速旋转坩埚技术布里奇曼法生长碲镉汞单晶

Research of Hg_(1-x)Cd_xTe Crystal Growth by Using Accelerated Crucible Rotation Technique Bridgman Method

本文报导了将加速旋转坩埚技术布里奇曼法应用于碲镉汞单晶的生长工艺中,获得了性能优良的原生n型晶体。对于x值力0.19～0.22的φ12晶片,组份均匀性为±0.0025,77K下载流子浓度小于4×10^(14)cm^(-3),迁移率高达2.

The growth of high quality as-grown n-type MCT crystals, by using accelerated crucible rotation technique bridgman method which has been developed during the middle of 80' s in the world, is discribed in this paper. For φ12 wafers with-between 0.19 and 0.22 the-uniformity is±0.0025. At 77K, the electronic concentration is less than 4×10^(14) cm^(-3) and the electronic mobility reaches 2.8×105 cm^2/v. s.